Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field
Chen, X; Zhan, JM; Li, YS; Cen, XR; cejmzhan@gmail.com
2014
发表期刊JOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
卷号389页码:60-67
摘要In the present study, a simulation of large diameter industrial Czochralski Si crystal growth is carried out using a combination of 2D axisymmetric global and 3D local models. The 2D global steady simulation is performed to obtain the thermal boundary conditions on the external wall of the crucible holder for 3D transient simulation under TMF. In the 3D model, the large eddy simulation (LES) turbulence model is adopted to obtain more accurate melt convection. The computed temperature distribution on the crucible wall agrees quite well with that from DNS simulation as well as experimental results in the absence of a magnetic field or with a vertical magnetic field. In order to clarify the effect of a transverse magnetic field (TMF), three different magnetic field intensities are used for simulation. The melt flow structures and temperature fluctuations under TMF are presented. The vortices at the corners of the crucible wall in the presence of weak or moderate magnetic field would not exist if axisymmetric thermal boundary conditions are used in the 3D model. The clamping effect of TMF is also studied. (C)2013 Elsevier B.V. All rights reserved
部门归属[Chen, Xi ; Zhan, Jie-min] Sun Yat Sen Univ, Dept Appl Mech & Engn, Guangzhou 510275, Guangdong, Peoples R China ; [Li, Yok-Sheung] Hong Kong Polytech Univ, Dept Civil & Environm Engn, Hong Kong, Hong Kong, Peoples R China ; [Cen, Xian-rong] Chinese Acad Sci, South China Sea Inst Oceanol, State Key Lab Trop Oceanog, Guangzhou 510301, Guangdong, Peoples R China
关键词Computer Simulation Heat Transfer Semiconducting Silicon Magnetic Field Assisted Czochralski Method
学科领域Crystallography ; Materials Science ; Physics
资助者Fundamental Research Funds for the Central Universities ; Fundamental Research Funds for the Central Universities ; Fundamental Research Funds for the Central Universities ; Fundamental Research Funds for the Central Universities
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收录类别sci
资助项目LTO
资助者Fundamental Research Funds for the Central Universities ; Fundamental Research Funds for the Central Universities ; Fundamental Research Funds for the Central Universities ; Fundamental Research Funds for the Central Universities
WOS记录号WOS:000335768600010
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.scsio.ac.cn/handle/344004/10566
专题热带海洋环境国家重点实验室(LTO)
通讯作者cejmzhan@gmail.com
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Chen, X,Zhan, JM,Li, YS,et al. Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field[J]. JOURNAL OF CRYSTAL GROWTH,2014,389:60-67.
APA Chen, X,Zhan, JM,Li, YS,Cen, XR,&cejmzhan@gmail.com.(2014).Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field.JOURNAL OF CRYSTAL GROWTH,389,60-67.
MLA Chen, X,et al."Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field".JOURNAL OF CRYSTAL GROWTH 389(2014):60-67.
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